Diodes Inc DMN62D1LFD-7 N-channel MOSFET, 400 mA, 60 V, 3-Pin X1-DFN1212

DMN62D1LFD-7 Diodes Inc  N-channel MOSFET, 400 mA, 60 V, 3-Pin X1-DFN1212
DiodesZetex

Product Information

Maximum Continuous Drain Current:
400 mA
Transistor Material:
Si
Width:
1.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
1V
Package Type:
X1-DFN1212
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.55 nC @ 4.5 V
Channel Type:
N
Length:
1.25mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.48mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
3 Ω
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 400 mA 60 V 3-Pin X1-DFN1212 manufactured by DiodesZetex. The manufacturer part number is DMN62D1LFD-7. While 400 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.25mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of x1-dfn1212. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.6v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 0.55 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 1.25mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.48mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 3 ω maximum drain source resistance.

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DMN62D1LFD, 60V N-Channel Enhancement Mode MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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