Diodes Inc DMN2990UFA-7B N-channel MOSFET, 510 mA, 20 V, 3-Pin X2-DFN0806

DMN2990UFA-7B Diodes Inc  N-channel MOSFET, 510 mA, 20 V, 3-Pin X2-DFN0806
DiodesZetex

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
0.5 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
400 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1V
Height:
0.35mm
Width:
0.85mm
Length:
0.65mm
Maximum Drain Source Resistance:
2.4 Ω
Package Type:
X2-DFN0806
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
510 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 510 mA 20 V 3-Pin X2-DFN0806 manufactured by DiodesZetex. The manufacturer part number is DMN2990UFA-7B. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 0.5 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 400 mw maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.35mm. Furthermore, the product is 0.85mm wide. Its accurate length is 0.65mm. It provides up to 2.4 ω maximum drain source resistance. The package is a sort of x2-dfn0806. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 510 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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DMN2990UFA, 20V N-Channel Enhancement Mode MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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