Category:
Power MOSFET
Dimensions:
3.35 x 3.35 x 0.85mm
Maximum Continuous Drain Current:
8.5 A
Transistor Material:
Si
Width:
3.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
3V
Maximum Drain Source Resistance:
133 mΩ
Package Type:
POWERDI3333
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
14.9 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
870 pF@ 25 V
Length:
3.35mm
Pin Count:
8
Typical Turn-Off Delay Time:
13.9 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.85mm
Typical Turn-On Delay Time:
4.4 ns
Minimum Operating Temperature:
-55 °C
