Category:
Trench MOSFET
Dimensions:
3 x 1.4 x 1mm
Maximum Continuous Drain Current:
300 mA
Transistor Material:
Si
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.1V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.33 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
15 pF @ 10 V
Length:
3mm
Pin Count:
3
Forward Transconductance:
500mS
Typical Turn-Off Delay Time:
11 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.33 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Typical Turn-On Delay Time:
6 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
9.2 Ω
