ON Semiconductor MCH6660-TL-H Dual N/P-channel MOSFET, 1.5 A, 2 A, 20 V, 6-Pin MCPH

MCH6660-TL-H ON Semiconductor  Dual N/P-channel MOSFET, 1.5 A, 2 A, 20 V, 6-Pin MCPH
ON Semiconductor

Product Information

Priced to Clear:
Yes
Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
1.7 nC @ 4.5 V, 1.8 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
800 mW
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
1.3V
Height:
0.85mm
Width:
1.6mm
Length:
2mm
Maximum Drain Source Resistance:
136 mΩ, 266 mΩ
Package Type:
MCPH
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
1.5 A, 2 A
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
RoHs Compliant
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This is Dual N/P-channel MOSFET 1.5 A 2 A 20 V 6-Pin MCPH manufactured by ON Semiconductor. The manufacturer part number is MCH6660-TL-H. Priced to Clear Options - yes. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 1.7 nc @ 4.5 v, 1.8 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 800 mw maximum power dissipation. It features a maximum gate source voltage of -10 v, +10 v. The product carries 1.3v of maximum gate threshold voltage. In addition, the height is 0.85mm. Furthermore, the product is 1.6mm wide. Its accurate length is 2mm. It provides up to 136 mω, 266 mω maximum drain source resistance. The package is a sort of mcph. It consists of 2 elements per chip. While 1.5 a, 2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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