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ON Semiconductor HUF76633P3_F085 N-channel MOSFET, 39 A, 100 V UltraFET, 3-Pin TO-220AB

HUF76633P3_F085 ON Semiconductor  N-channel MOSFET, 39 A, 100 V UltraFET, 3-Pin TO-220AB
ON Semiconductor

Product Information

Maximum Continuous Drain Current:
39 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
3V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
56 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
145 W
Series:
UltraFET
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
16.3mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
35 mΩ
RoHs Compliant
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This is N-channel MOSFET 39 A 100 V UltraFET 3-Pin TO-220AB manufactured by ON Semiconductor. The manufacturer part number is HUF76633P3_F085. While 39 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.7mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 3v of maximum gate threshold voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 56 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 145 w maximum power dissipation. The product ultrafet, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +16 v. In addition, the height is 16.3mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 35 mω maximum drain source resistance.

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HUF76633P3, HUF76633S3S, 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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You will get a confirmation email regarding your order of ON Semiconductor HUF76633P3_F085 N-channel MOSFET, 39 A, 100 V UltraFET, 3-Pin TO-220AB. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor HUF76633P3_F085 N-channel MOSFET, 39 A, 100 V UltraFET, 3-Pin TO-220AB.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16727258 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16727258.
Yes. We ship HUF76633P3_F085 Internationally to many countries around the world.