ON Semiconductor CPH3350-TL-H P-channel MOSFET, 3 A, 20 V, 3-Pin CPH

CPH3350-TL-H ON Semiconductor  P-channel MOSFET, 3 A, 20 V, 3-Pin CPH
CPH3350-TL-H
ON Semiconductor

Product Information

Priced to Clear:
Yes
Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
4.6 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
1.3V
Height:
0.9mm
Width:
1.6mm
Length:
2.9mm
Maximum Drain Source Resistance:
196 mΩ
Package Type:
CPH
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is P-channel MOSFET 3 A 20 V 3-Pin CPH manufactured by ON Semiconductor. The manufacturer part number is CPH3350-TL-H. Priced to Clear Options - yes. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 4.6 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1 w maximum power dissipation. It features a maximum gate source voltage of -10 v, +10 v. The product carries 1.3v of maximum gate threshold voltage. In addition, the height is 0.9mm. Furthermore, the product is 1.6mm wide. Its accurate length is 2.9mm. It provides up to 196 mω maximum drain source resistance. The package is a sort of cph. It consists of 1 elements per chip. While 3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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