Vishay SUP70040E-GE3 N-channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB

SUP70040E-GE3 Vishay  N-channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB
SUP70040E-GE3
Vishay

Product Information

Maximum Continuous Drain Current:
120 A
Transistor Material:
Si
Width:
4.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
76 nC @ 10 V
Channel Type:
N
Length:
10.51mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
375 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
15.49mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
4.6 mΩ
RoHs Compliant
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This is N-channel MOSFET 120 A 100 V 3-Pin TO-220AB manufactured by Vishay. The manufacturer part number is SUP70040E-GE3. While 120 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.65mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 76 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.51mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 375 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 15.49mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It provides up to 4.6 mω maximum drain source resistance.

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SUP70040E, N-Channel 100V (D-S) MOSFET 120A(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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