Vishay SUM50020E-GE3 N-channel MOSFET, 120 A, 60 V, 8-Pin D2PAK

SUM50020E-GE3 Vishay  N-channel MOSFET, 120 A, 60 V, 8-Pin D2PAK
SUM50020E-GE3
Vishay

Product Information

Maximum Continuous Drain Current:
120 A
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
126 nC @ 10 V
Channel Type:
N
Length:
10.41mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
375 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.82mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
2.6 mΩ
RoHs Compliant
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This is N-channel MOSFET 120 A 60 V 8-Pin D2PAK manufactured by Vishay. The manufacturer part number is SUM50020E-GE3. While 120 a of maximum continuous drain current. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 126 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.41mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 375 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.82mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It provides up to 2.6 mω maximum drain source resistance.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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