Vishay SQJB42EP-T1_GE3 Dual N-channel MOSFET, 30 A, 40 V TrenchFET, 8-Pin SO

SQJB42EP-T1_GE3 Vishay  Dual N-channel MOSFET, 30 A, 40 V TrenchFET, 8-Pin SO
Vishay

Product Information

Maximum Continuous Drain Current:
30 A
Width:
5.26mm
Automotive Standard:
AEC-Q101
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
SO
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
17 nC @ 10 V
Channel Type:
N
Length:
6.25mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
48 W
Series:
TrenchFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.12mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
16 mΩ
RoHs Compliant
Checking for live stock

This is Dual N-channel MOSFET 30 A 40 V TrenchFET 8-Pin SO manufactured by Vishay. The manufacturer part number is SQJB42EP-T1_GE3. While 30 a of maximum continuous drain current. Furthermore, the product is 5.26mm wide. The product complies with automotive standard - aec-q101. It has a maximum of 40 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of so. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 17 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.25mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 48 w maximum power dissipation. The product trenchfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.12mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 16 mω maximum drain source resistance.

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SQJB42EP, Automotive Dual N-Channel 40V 175°C MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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