Vishay SIRA88DP-T1-GE3 N-channel MOSFET, 45.5 A, 30 V TrenchFET, 8-Pin SO

SIRA88DP-T1-GE3 Vishay  N-channel MOSFET, 45.5 A, 30 V TrenchFET, 8-Pin SO
Vishay

Product Information

Maximum Continuous Drain Current:
45.5 A
Width:
5.26mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.4V
Package Type:
PowerPAK SO-8
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
16.8 nC @ 10 V
Channel Type:
N
Length:
6.25mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
25 W
Series:
TrenchFET
Maximum Gate Source Voltage:
+20 V
Height:
1.12mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
10 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 45.5 A 30 V TrenchFET 8-Pin SO manufactured by Vishay. The manufacturer part number is SIRA88DP-T1-GE3. While 45.5 a of maximum continuous drain current. Furthermore, the product is 5.26mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.4v of maximum gate threshold voltage. The package is a sort of powerpak so-8. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 16.8 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.25mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 25 w maximum power dissipation. The product trenchfet, is a highly preferred choice for users. It features a maximum gate source voltage of +20 v. In addition, the height is 1.12mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.1v . It provides up to 10 mω maximum drain source resistance.

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SiRA88DP, N-Channel 30V MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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