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This is N-channel MOSFET 100 A 60 V TrenchFET 8-Pin SO manufactured by Vishay. The manufacturer part number is SIR626DP-T1-RE3. While 100 a of maximum continuous drain current. Furthermore, the product is 5.26mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 3.4v of maximum gate threshold voltage. The package is a sort of so. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 68 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.25mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 104 w maximum power dissipation. The product trenchfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.12mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.1v . It provides up to 2.6 mω maximum drain source resistance.
For more information please check the datasheets.
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