Vishay SIR484DP-T1-GE3 N-channel MOSFET, 17 A, 20 V, 8-Pin PowerPAK SO

SIR484DP-T1-GE3 Vishay  N-channel MOSFET, 17 A, 20 V, 8-Pin PowerPAK SO
Vishay

Product Information

Category:
Power MOSFET
Dimensions:
5.99 x 5 x 1.12mm
Maximum Continuous Drain Current:
17 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Package Type:
PowerPAK SO
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
830 pF @ 10 V
Length:
5.99mm
Pin Count:
8
Typical Turn-Off Delay Time:
17 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
29.8 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.12mm
Typical Turn-On Delay Time:
15 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
11.5 mΩ
RoHs Compliant
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This is N-channel MOSFET 17 A 20 V 8-Pin PowerPAK SO manufactured by Vishay. The manufacturer part number is SIR484DP-T1-GE3. It is of power mosfet category . The given dimensions of the product include 5.99 x 5 x 1.12mm. While 17 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The package is a sort of powerpak so. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 15 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 830 pf @ 10 v . Its accurate length is 5.99mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 17 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 29.8 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.12mm. In addition, it has a typical 15 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 11.5 mω maximum drain source resistance.

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SiR484DP, N-Channel 20V (D-S) MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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