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This is N-channel MOSFET 25 A 600 V E Series 4-Pin PowerPAK manufactured by Vishay. The manufacturer part number is SIHH26N60E-T1-GE3. While 25 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 8.1mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of powerpak 8 x 8. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 77 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 8.1mm. It contains 4 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 202 w maximum power dissipation. The product e series, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 135 mω maximum drain source resistance.
For more information please check the datasheets.
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