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This is SiHG32N50D-GE3 N-channel MOSFET 30 A 500 V 3-Pin TO-247AC manufactured by Vishay. The manufacturer part number is SIHG32N50D-GE3. It has a maximum of 500 v drain source voltage. With a typical gate charge at Vgs includes 64 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 390 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 20.82mm. Furthermore, the product is 5.31mm wide. Its accurate length is 15.87mm. Whereas its minimum gate threshold voltage includes 3v. The package is a sort of to-247ac. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 150 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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