Vishay SI7949DP-T1-E3 P-channel MOSFET, 12.5 A, 80 V, 8-Pin PowerPAK SO

SI7949DP-T1-E3 Vishay  P-channel MOSFET, 12.5 A, 80 V, 8-Pin PowerPAK SO
Vishay

Product Information

Maximum Drain Source Voltage:
80 V
Typical Gate Charge @ Vgs:
34 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
5.2 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.12mm
Width:
5.26mm
Length:
6.25mm
Minimum Gate Threshold Voltage:
1V
Package Type:
PowerPAK SO
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
12.5 A
Transistor Material:
Si
Maximum Drain Source Resistance:
16.5 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
RoHs Compliant
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This is P-channel MOSFET 12.5 A 80 V 8-Pin PowerPAK SO manufactured by Vishay. The manufacturer part number is SI7949DP-T1-E3. It has a maximum of 80 v drain source voltage. With a typical gate charge at Vgs includes 34 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 5.2 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.12mm. Furthermore, the product is 5.26mm wide. Its accurate length is 6.25mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of powerpak so. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 12.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 16.5 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.

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Si7949DP, Dual P-Channel 60V (Drain-Source) MOSFET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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