Vishay SI4666DY-T1-GE3 N-channel MOSFET, 16.5 A, 25 V, 8-Pin SOIC

SI4666DY-T1-GE3 Vishay  N-channel MOSFET, 16.5 A, 25 V, 8-Pin SOIC
SI4666DY-T1-GE3
Vishay

Product Information

Maximum Continuous Drain Current:
16.5 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Maximum Drain Source Resistance:
14 mΩ
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
22.4 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
5 W
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1.55mm
Minimum Operating Temperature:
-55 °C
RoHs Compliant
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This is N-channel MOSFET 16.5 A 25 V 8-Pin SOIC manufactured by Vishay. The manufacturer part number is SI4666DY-T1-GE3. While 16.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4mm wide. The product offers single transistor configuration. It has a maximum of 25 v drain source voltage. It provides up to 14 mω maximum drain source resistance. The package is a sort of soic. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.6v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 22.4 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 5 w maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 1.55mm. Whereas, the minimum operating temperature of the product is -55 °c.

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Si4666DY, N-Channel 25V (D-S) MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of Vishay SI4666DY-T1-GE3 N-channel MOSFET, 16.5 A, 25 V, 8-Pin SOIC. You can also check on our website or by contacting our customer support team for further order details on Vishay SI4666DY-T1-GE3 N-channel MOSFET, 16.5 A, 25 V, 8-Pin SOIC.
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