Vishay SI3476DV-T1-GE3 N-channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23

SI3476DV-T1-GE3 Vishay  N-channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23
Vishay

Product Information

Maximum Drain Source Voltage:
80 V
Typical Gate Charge @ Vgs:
4.9 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.6 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
3V
Height:
1mm
Width:
1.7mm
Length:
3.1mm
Maximum Drain Source Resistance:
126 mΩ
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4.6 A
Minimum Gate Threshold Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 4.6 A 80 V 6-Pin SOT-23 manufactured by Vishay. The manufacturer part number is SI3476DV-T1-GE3. It has a maximum of 80 v drain source voltage. With a typical gate charge at Vgs includes 4.9 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 3.6 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. The product carries 3v of maximum gate threshold voltage. In addition, the height is 1mm. Furthermore, the product is 1.7mm wide. Its accurate length is 3.1mm. It provides up to 126 mω maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 4.6 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1.2v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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