Vishay SI3410DV-T1-GE3 N-channel MOSFET, 8 A, 30 V, 6-Pin TSOP

Vishay

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
21.8 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
4.1 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Width:
1.7mm
Length:
3.1mm
Minimum Gate Threshold Voltage:
1V
Package Type:
TSOP
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Maximum Drain Source Resistance:
23 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 8 A 30 V 6-Pin TSOP manufactured by Vishay. The manufacturer part number is SI3410DV-T1-GE3. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 21.8 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 4.1 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1mm. Furthermore, the product is 1.7mm wide. Its accurate length is 3.1mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of tsop. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 23 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers single transistor configuration.

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Si3410DV, N-Channel 30V (D-S) MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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