Vishay SI2374DS-T1-GE3 N-channel MOSFET, 5.9 A, 20 V, 3-Pin SOT-363

SI2374DS-T1-GE3 Vishay  N-channel MOSFET, 5.9 A, 20 V, 3-Pin SOT-363
Vishay

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
13.4 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.7 W
Maximum Gate Source Voltage:
±8 V
Maximum Gate Threshold Voltage:
1V
Height:
1.02mm
Width:
1.4mm
Length:
3.04mm
Maximum Drain Source Resistance:
41 mΩ
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
5.9 A
Minimum Gate Threshold Voltage:
0.4V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 5.9 A 20 V 3-Pin SOT-363 manufactured by Vishay. The manufacturer part number is SI2374DS-T1-GE3. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 13.4 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.7 w maximum power dissipation. It features a maximum gate source voltage of ±8 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 1.02mm. Furthermore, the product is 1.4mm wide. Its accurate length is 3.04mm. It provides up to 41 mω maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 5.9 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 0.4v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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