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This is P-channel MOSFET 4.7 A 20 V 3-Pin SOT-23 manufactured by Vishay. The manufacturer part number is SI2365EDS-T1-GE3. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 23.8 nc @ 8 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.7 w maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 1.02mm. Furthermore, the product is 1.4mm wide. Its accurate length is 3.04mm. Whereas its minimum gate threshold voltage includes 0.4v. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -50 °c. While 4.7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 67.5 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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