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This is Si1965DH-T1-GE3 Dual P-channel MOSFET 1.2 A 12 V 6-Pin SOT-363 manufactured by Vishay. The manufacturer part number is SI1965DH-T1-GE3. It has a maximum of 12 v drain source voltage. With a typical gate charge at Vgs includes 2.8 nc @ 8 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.25 w maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 1mm. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. Whereas its minimum gate threshold voltage includes 0.4v. The package is a sort of sot-363 (sc-88). It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1.2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 710 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.
For more information please check the datasheets.
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