Vishay SI1422DH-T1-GE3 N-channel MOSFET, 4 A, 12 V, 6-Pin SOT-363

SI1422DH-T1-GE3 Vishay  N-channel MOSFET, 4 A, 12 V, 6-Pin SOT-363
Vishay

Product Information

Maximum Drain Source Voltage:
12 V
Typical Gate Charge @ Vgs:
13.1 nC @ 8 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.8 W
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1mm
Width:
1.35mm
Length:
2.2mm
Minimum Gate Threshold Voltage:
0.4V
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Maximum Drain Source Resistance:
36 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 4 A 12 V 6-Pin SOT-363 manufactured by Vishay. The manufacturer part number is SI1422DH-T1-GE3. It has a maximum of 12 v drain source voltage. With a typical gate charge at Vgs includes 13.1 nc @ 8 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.8 w maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 1mm. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. Whereas its minimum gate threshold voltage includes 0.4v. The package is a sort of sot-363 (sc-88). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 36 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers single transistor configuration.

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Si1422DH, N-Channel 12V (D-S) MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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