Vishay SI1016CX-T1-GE3 Dual N/P-channel MOSFET, 600 mA, 20 V, 6-Pin SOT-563

SI1016CX-T1-GE3 Vishay  Dual N/P-channel MOSFET, 600 mA, 20 V, 6-Pin SOT-563
Vishay

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
1.3 nC @ 4.5 V, 1.65 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
220 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.6mm
Width:
1.2mm
Length:
1.7mm
Minimum Gate Threshold Voltage:
0.4V
Package Type:
SOT-563
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
600 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
2.4 Ω, 760 mΩ
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
RoHs Compliant
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This is Dual N/P-channel MOSFET 600 mA 20 V 6-Pin SOT-563 manufactured by Vishay. The manufacturer part number is SI1016CX-T1-GE3. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 1.3 nc @ 4.5 v, 1.65 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 220 mw maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 0.6mm. Furthermore, the product is 1.2mm wide. Its accurate length is 1.7mm. Whereas its minimum gate threshold voltage includes 0.4v. The package is a sort of sot-563. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 600 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 2.4 ω, 760 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.

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Si1016CX, Complementary N- and P-Channel 20V (D-S) MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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