Vishay IRFU9110PBF P-channel MOSFET, 3.1 A, 100 V, 3-Pin IPAK

IRFU9110PBF Vishay  P-channel MOSFET, 3.1 A, 100 V, 3-Pin IPAK
Vishay

Product Information

Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
8.7 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
6.22mm
Width:
2.38mm
Length:
6.73mm
Minimum Gate Threshold Voltage:
2V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
3.1 A
Transistor Material:
Si
Maximum Drain Source Resistance:
1.2 Ω
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is P-channel MOSFET 3.1 A 100 V 3-Pin IPAK manufactured by Vishay. The manufacturer part number is IRFU9110PBF. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 8.7 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 2.5 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 6.22mm. Furthermore, the product is 2.38mm wide. Its accurate length is 6.73mm. Whereas its minimum gate threshold voltage includes 2v. The package is a sort of ipak (to-251). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 3.1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 1.2 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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IRFU9110PBF Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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