Maximum Continuous Drain Current:
60 A
Width:
15.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-268HV
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
108 nC @ 10 V
Channel Type:
N
Length:
16.05mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
780 W
Series:
HiperFET
Maximum Gate Source Voltage:
±30 V
Height:
5.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.4V
Maximum Drain Source Resistance:
52 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Rds On (Max) @ Id, Vgs:
52mOhm @ 30A, 10V
title:
IXFT60N65X2HV
Vgs(th) (Max) @ Id:
5V @ 4mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power Dissipation (Max):
780W (Tc)
standardLeadTime:
32 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
6300 pF @ 25 V
Mounting Type:
Surface Mount
Series:
HiPerFET™, Ultra X2
Gate Charge (Qg) (Max) @ Vgs:
108 nC @ 10 V
Supplier Device Package:
TO-268HV (IXFT)
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFT60
ECCN:
EAR99
