Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Width:
3.15mm
Automotive Standard:
AEC-Q101
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
PowerPAK 1212-8
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
11.5 nC @ 10 V
Channel Type:
N
Length:
3.15mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
27.8 W
Series:
TrenchFET
Maximum Gate Source Voltage:
±20 V
Height:
1.07mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
40 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
PowerPAK® 1212-8W Dual
Rds On (Max) @ Id, Vgs:
25mOhm @ 1.25A, 10V
title:
SQS944ENW-T1_GE3
Vgs(th) (Max) @ Id:
2.5V @ 250µA
edacadModel:
SQS944ENW-T1_GE3 Models
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
edacadModelUrl:
/en/models/9084098
Configuration:
2 N-Channel (Dual)
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
40V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Qualification:
AEC-Q101
standardLeadTime:
27 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
615pF @ 25V
Mounting Type:
Surface Mount, Wettable Flank
Grade:
Automotive
Series:
TrenchFET®
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 10V
Supplier Device Package:
PowerPAK® 1212-8W Dual
Packaging:
Tape & Reel (TR)
Power - Max:
27.8W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQS944
ECCN:
EAR99
