Maximum Continuous Drain Current:
150 A
Transistor Material:
Si
Width:
4.83mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
106 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
7
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
150 W
Series:
TrenchFET
Maximum Gate Source Voltage:
±20 V
Height:
11.3mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
3 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-7, D2PAK (6 Leads + Tab)
Rds On (Max) @ Id, Vgs:
1.63mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs:
160 nC @ 10 V
Vgs(th) (Max) @ Id:
3.5V @ 250µA
edacadModel:
SQM40022EM_GE3 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/9084097
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
9200 pF @ 25 V
Qualification:
AEC-Q101
standardLeadTime:
57 Weeks
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
TrenchFET®
Supplier Device Package:
TO-263-7
Current - Continuous Drain (Id) @ 25°C:
150A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQM40022
ECCN:
EAR99
