Maximum Continuous Drain Current:
9.4 A
Transistor Material:
Si
Width:
5mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
PowerPAK SO-8L
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
55 nC @ 10 V
Channel Type:
P
Length:
5.99mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
68 W
Series:
TrenchFET
Maximum Gate Source Voltage:
±20 V
Height:
1.07mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
760 mΩ
Detailed Description:
P-Channel 200V 9.4A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
PowerPAK® SO-8 Dual
Base Part Number:
SQJ431
Gate Charge (Qg) (Max) @ Vgs:
85nC @ 10V
Rds On (Max) @ Id, Vgs:
305mOhm @ 3.8A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
200V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3700pF @ 25V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchFET®
Supplier Device Package:
PowerPAK® SO-8 Dual
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
9.4A (Tc)
Customer Reference:
Power Dissipation (Max):
68W (Tc)
Technology:
MOSFET (Metal Oxide)
