Maximum Continuous Drain Current:
9.4 A
Transistor Material:
Si
Width:
5mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
PowerPAK SO-8L
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
55 nC @ 10 V
Channel Type:
P
Length:
5.99mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
68 W
Series:
TrenchFET
Maximum Gate Source Voltage:
±20 V
Height:
1.07mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
760 mΩ
Detailed Description:
P-Channel 200V 9.4A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
PowerPAK® SO-8 Dual
Base Part Number:
SQJ431
Gate Charge (Qg) (Max) @ Vgs:
85nC @ 10V
Rds On (Max) @ Id, Vgs:
305mOhm @ 3.8A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
200V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3700pF @ 25V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchFET®
Supplier Device Package:
PowerPAK® SO-8 Dual
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
9.4A (Tc)
Customer Reference:
Power Dissipation (Max):
68W (Tc)
Technology:
MOSFET (Metal Oxide)
This is manufactured by Vishay Siliconix. The manufacturer part number is SQJ431AEP-T1_GE3. While 9.4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 200 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of powerpak so-8l. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 55 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5.99mm. It contains 4 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 68 w maximum power dissipation. The product trenchfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.07mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 760 mω maximum drain source resistance. It features p-channel 200v 9.4a (tc) 68w (tc) surface mount powerpak® so-8 dual. The typical Vgs (th) (max) of the product is 3.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in powerpak® so-8 dual. Base Part Number: sqj431. The maximum gate charge and given voltages include 85nc @ 10v. It has a maximum Rds On and voltage of 305mohm @ 3.8a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The vishay siliconix's product offers user-desired applications. The product has a 200v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 3700pf @ 25v. The product automotive, aec-q101, trenchfet®, is a highly preferred choice for users. powerpak® so-8 dual is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 9.4a (tc). The product carries maximum power dissipation 68w (tc). This product use mosfet (metal oxide) technology.
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