ON Semiconductor NVTFS5C478NLWFTAG

NVTFS5C478NLWFTAG ON Semiconductor
NVTFS5C478NLWFTAG
ON Semiconductor

Product Information

Maximum Continuous Drain Current:
26 A
Width:
3.15mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
WDFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
3.8 nC @ 4.5 V
Channel Type:
N
Length:
3.15mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
20 W
Series:
NVTFS5C478NL
Maximum Gate Source Voltage:
±20 V
Height:
0.75mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
25 mΩ
Manufacturer Standard Lead Time:
51 Weeks
Detailed Description:
N-Channel 40V 26A (Tc) 20W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id:
2.2V @ 20µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerWDFN
Base Part Number:
NVTFS5
Gate Charge (Qg) (Max) @ Vgs:
3.8nC @ 4.5V
Rds On (Max) @ Id, Vgs:
14mOhm @ 5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
400pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
8-WDFN (3.3x3.3)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
26A (Tc)
Customer Reference:
Power Dissipation (Max):
20W (Tc)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NVTFS5C478NLWFTAG. While 26 a of maximum continuous drain current. Furthermore, the product is 3.15mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2.2v of maximum gate threshold voltage. The package is a sort of wdfn. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 3.8 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3.15mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 20 w maximum power dissipation. The product nvtfs5c478nl, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 0.75mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 25 mω maximum drain source resistance. It has typical 51 weeks of manufacturer standard lead time. It features n-channel 40v 26a (tc) 20w (tc) surface mount 8-wdfn (3.3x3.3). The typical Vgs (th) (max) of the product is 2.2v @ 20µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powerwdfn. Base Part Number: nvtfs5. The maximum gate charge and given voltages include 3.8nc @ 4.5v. It has a maximum Rds On and voltage of 14mohm @ 5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 400pf @ 25v. 8-wdfn (3.3x3.3) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 26a (tc). The product carries maximum power dissipation 20w (tc). This product use mosfet (metal oxide) technology.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev DryPack/Assembly Chgs 25/Feb/2021(PCN Assembly/Origin)
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NVTFS5C478NL(Datasheets)

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