Maximum Continuous Drain Current:
40 A
Width:
4.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
70 nC @ 10 V
Channel Type:
N
Length:
10.63mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
48 W
Maximum Gate Source Voltage:
±30 V
Height:
16.12mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
82 mΩ
Gate Charge (Qg) (Max) @ Vgs:
70nC @ 10V
Detailed Description:
N-Channel 650V 40A (Tc) 48W (Tc) Through Hole TO-220F-3
Input Capacitance (Ciss) (Max) @ Vds:
3240pF @ 400V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
5V @ 4mA
Series:
SuperFET® III
Vgs (Max):
±30V
Standard Package:
1,000
Supplier Device Package:
TO-220F-3
Lead Free Status:
Lead free
Rds On (Max) @ Id, Vgs:
82 mOhm @ 20A, 10V
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package / Case:
TO-220-3 Full Pack
Power Dissipation (Max):
48W (Tc)
Drain to Source Voltage (Vdss):
650V
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
