Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
25 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
60 W
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
16.3mm
Width:
4.7mm
Length:
10.67mm
Minimum Gate Threshold Voltage:
0.4V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Continuous Drain Current:
24 A
Transistor Material:
Si
Maximum Drain Source Resistance:
80 mΩ
Channel Type:
P
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
NDP602
Detailed Description:
P-Channel 20V 24A (Tc) 60W (Tc) Through Hole TO-220-3
Input Capacitance (Ciss) (Max) @ Vds:
1590pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
4.5V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
1V @ 250µA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Gate Charge (Qg) (Max) @ Vgs:
35nC @ 5V
Rds On (Max) @ Id, Vgs:
50mOhm @ 12A, 4.5V
Supplier Device Package:
TO-220-3
Packaging:
Tube
Operating Temperature:
-65°C ~ 175°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
TO-220-3
Power Dissipation (Max):
60W (Tc)
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
