Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
78 W
Maximum Gate Source Voltage:
+30 V
Maximum Gate Threshold Voltage:
4.5V
Height:
7.62mm
Width:
2.38mm
Length:
6.73mm
Maximum Drain Source Resistance:
3.6 Ω
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
NDD03
Detailed Description:
N-Channel 600V 2.6A (Tc) 61W (Tc) Through Hole I-PAK
Input Capacitance (Ciss) (Max) @ Vds:
312pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4.5V @ 50µA
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
12nC @ 10V
Rds On (Max) @ Id, Vgs:
3.6Ohm @ 1.2A, 10V
Supplier Device Package:
I-PAK
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max):
61W (Tc)
Current - Continuous Drain (Id) @ 25°C:
2.6A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
