Maximum Continuous Drain Current:
3.7 A
Transistor Material:
Si
Width:
2.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10 nC @ 10 V
Channel Type:
P
Length:
6.8mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
45 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
7.57mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.4 Ω
Manufacturer Standard Lead Time:
4 Weeks
Detailed Description:
P-Channel 200V 3.7A (Tc) 2.5W (Ta), 45W (Tc) Through Hole I-PAK
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Gate Charge (Qg) (Max) @ Vgs:
13nC @ 10V
Rds On (Max) @ Id, Vgs:
1.4 Ohm @ 1.85A, 10V
FET Type:
P-Channel
Standard Package:
5,040
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
200V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
430pF @ 25V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
I-PAK
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
3.7A (Tc)
Power Dissipation (Max):
2.5W (Ta), 45W (Tc)
Technology:
MOSFET (Metal Oxide)
