Maximum Continuous Drain Current:
40 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
12 nC @ 5 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
60 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.4mm
Minimum Operating Temperature:
-65 °C
Maximum Drain Source Resistance:
18 mΩ
Detailed Description:
N-Channel 30V 40A (Tc) 60W (Tc) Through Hole TO-220-3
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-65°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Base Part Number:
FDP60
Gate Charge (Qg) (Max) @ Vgs:
17nC @ 5V
Rds On (Max) @ Id, Vgs:
18mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1160pF @ 15V
Mounting Type:
Through Hole
Series:
PowerTrench®
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Customer Reference:
Power Dissipation (Max):
60W (Tc)
Technology:
MOSFET (Metal Oxide)
