ON Semiconductor FDMD82100

FDMD82100 ON Semiconductor
FDMD82100
FDMD82100
ON Semiconductor

Product Information

Maximum Continuous Drain Current:
25 A
Transistor Material:
Si
Width:
3.4mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
100 V
Package Type:
PQFN
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Channel Type:
N
Length:
5.1mm
Pin Count:
12
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.1 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.75mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
35 mΩ
FET Feature:
Standard
Base Part Number:
FDMD82
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 100V 7A 1W Surface Mount 12-Power3.3x5
Input Capacitance (Ciss) (Max) @ Vds:
1070pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:
17nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 250µA
Series:
PowerTrench®
Package / Case:
12-PowerWDFN
Rds On (Max) @ Id, Vgs:
19mOhm @ 7A, 10V
Supplier Device Package:
12-Power3.3x5
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
1W
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
7A
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is FDMD82100. While 25 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.4mm wide. The product offers series transistor configuration. It has a maximum of 100 v drain source voltage. The package is a sort of pqfn. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 12 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5.1mm. It contains 12 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.1 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.75mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 35 mω maximum drain source resistance. The FET features of the product include standard. Base Part Number: fdmd82. It features mosfet array 2 n-channel (dual) 100v 7a 1w surface mount 12-power3.3x5. The product's input capacitance at maximum includes 1070pf @ 50v. The maximum gate charge and given voltages include 17nc @ 10v. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product powertrench®, is a highly preferred choice for users. Moreover, the product comes in 12-powerwdfn. It has a maximum Rds On and voltage of 19mohm @ 7a, 10v. 12-power3.3x5 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 1w. The product has a 100v drain to source voltage. The continuous current drain at 25°C is 7a. The on semiconductor's product offers user-desired applications.

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ESD Control Selection Guide V1(Technical Reference)
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FDMD82100, Dual N-Channel PowerTrench MOSFET 100V, 25A, 19mOhm(Technical Reference)
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Mult Dev Assembly 11/Mar/2020(PCN Assembly/Origin)
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FDMD82100(Datasheets)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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Yes. We ship FDMD82100 Internationally to many countries around the world.