Maximum Continuous Drain Current:
50 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
16 nC @ 4.5 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
44 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
19 mΩ
Detailed Description:
N-Channel 20V 14.7A (Ta), 50A (Tc) 3.8W (Ta), 44W (Tc) Surface Mount TO-252, (D-Pak)
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FDD370
Gate Charge (Qg) (Max) @ Vgs:
23nC @ 4.5V
Rds On (Max) @ Id, Vgs:
9mOhm @ 16.2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
1882pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-252, (D-Pak)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
14.7A (Ta), 50A (Tc)
Customer Reference:
Power Dissipation (Max):
3.8W (Ta), 44W (Tc)
Technology:
MOSFET (Metal Oxide)
