Maximum Continuous Drain Current:
4.5 A
Transistor Material:
Si
Width:
2.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13.1 nC @ 10 V
Channel Type:
N
Length:
6.8mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
52 W
Series:
SuperFET II
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
7.57mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
900 mΩ
Manufacturer Standard Lead Time:
15 Weeks
Rds On (Max) @ Id, Vgs:
900mOhm @ 2.3A, 10V
Detailed Description:
N-Channel 600V 4.5A (Tc) 52W (Tc) Through Hole I-PAK
Input Capacitance (Ciss) (Max) @ Vds:
710pF @ 25V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Series:
SuperFET® II
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
17nC @ 10V
Supplier Device Package:
I-PAK
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
TO-251-3 Stub Leads, IPak
Power Dissipation (Max):
52W (Tc)
Drain to Source Voltage (Vdss):
600V
Current - Continuous Drain (Id) @ 25°C:
4.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
