Diodes Inc ZXM62N03GTA N-channel MOSFET, 4.7 A, 30 V, 3+Tab-Pin SOT-223

ZXM62N03GTA Diodes Inc  N-channel MOSFET, 4.7 A, 30 V, 3+Tab-Pin SOT-223
DiodesZetex

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
9.6 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.9 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.7mm
Width:
3.7mm
Length:
6.7mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4.7 A
Transistor Material:
Si
Maximum Drain Source Resistance:
150 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 4.7 A 30 V 3+Tab-Pin SOT-223 manufactured by DiodesZetex. The manufacturer part number is ZXM62N03GTA. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 9.6 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 3.9 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.7mm. Furthermore, the product is 3.7mm wide. Its accurate length is 6.7mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 4.7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 150 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 + tab pins. The product offers single transistor configuration.

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30v N-Channel Enhancement Mode Mosfet Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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