Diodes Inc DMP22D4UFA-7B P-channel MOSFET, 330 mA, 20 V, 3-Pin X2-DFN0806

DMP22D4UFA-7B Diodes Inc  P-channel MOSFET, 330 mA, 20 V, 3-Pin X2-DFN0806
DiodesZetex

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
0.4 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
400 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1V
Height:
0.35mm
Width:
0.85mm
Length:
0.65mm
Maximum Drain Source Resistance:
5 Ω
Package Type:
X2-DFN0806
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
330 mA
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc P-channel MOSFET 330 mA 20 V 3-Pin X2-DFN0806 manufactured by DiodesZetex. The manufacturer part number is DMP22D4UFA-7B. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 0.4 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 400 mw maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.35mm. Furthermore, the product is 0.85mm wide. Its accurate length is 0.65mm. It provides up to 5 ω maximum drain source resistance. The package is a sort of x2-dfn0806. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 330 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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ESD Control Selection Guide V1(Technical Reference)
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DMP22D4UFA, 20V P-Channel Enhancement Mode MOSFET(Technical Reference)

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