Diodes Inc DMN5L06DMK-7 Dual N-channel MOSFET, 800 mA, 50 V, 6-Pin SOT-26

DMN5L06DMK-7 Diodes Inc  Dual N-channel MOSFET, 800 mA, 50 V, 6-Pin SOT-26
DiodesZetex

Product Information

Maximum Drain Source Voltage:
50 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
400 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
1V
Height:
1.3mm
Width:
1.7mm
Length:
3.1mm
Maximum Drain Source Resistance:
2 Ω
Package Type:
SOT-26
Number of Elements per Chip:
2
Minimum Operating Temperature:
-65 °C
Maximum Continuous Drain Current:
800 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
RoHs Compliant
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This is Diodes Inc Dual N-channel MOSFET 800 mA 50 V 6-Pin SOT-26 manufactured by DiodesZetex. The manufacturer part number is DMN5L06DMK-7. It has a maximum of 50 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 400 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 1.3mm. Furthermore, the product is 1.7mm wide. Its accurate length is 3.1mm. It provides up to 2 ω maximum drain source resistance. The package is a sort of sot-26. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. While 800 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.

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Dual N-Channel Enhancement Mode Field Effect Transistor Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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