Diodes Inc DMN53D0U-7 MOSFET

DMN53D0U-7 Diodes Inc  MOSFET
DiodesZetex

Product Information

Maximum Continuous Drain Current:
300 mA
Transistor Material:
Si
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
50 V
Maximum Gate Threshold Voltage:
1V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.6 nC @ 4.5 V
Channel Type:
N
Length:
3mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
520 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.4V
Maximum Drain Source Resistance:
3 Ω
RoHs Compliant
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This is Diodes Inc MOSFET manufactured by DiodesZetex. The manufacturer part number is DMN53D0U-7. While 300 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. It has a maximum of 50 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 0.6 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 520 mw maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.4v . It provides up to 3 ω maximum drain source resistance.

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DMN53D0U, N-Channel Enhancement Mode Field Effect Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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