Diodes Inc DMG1026UV-7 Dual N-channel MOSFET, 440 mA, 60 V, 6-Pin SOT-563

DMG1026UV-7 Diodes Inc  Dual N-channel MOSFET, 440 mA, 60 V, 6-Pin SOT-563
DiodesZetex

Product Information

Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
0.45 pC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
650 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
1.8V
Height:
0.6mm
Width:
1.25mm
Length:
1.7mm
Maximum Drain Source Resistance:
2.1 Ω
Package Type:
SOT-563
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
440 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
RoHs Compliant
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This is Diodes Inc Dual N-channel MOSFET 440 mA 60 V 6-Pin SOT-563 manufactured by DiodesZetex. The manufacturer part number is DMG1026UV-7. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 0.45 pc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 650 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 1.8v of maximum gate threshold voltage. In addition, the height is 0.6mm. Furthermore, the product is 1.25mm wide. Its accurate length is 1.7mm. It provides up to 2.1 ω maximum drain source resistance. The package is a sort of sot-563. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 440 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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