Diodes Inc 2N7002W-7-F N-channel MOSFET, 115 mA, 60 V, 3-Pin SOT-323

2N7002W-7-F Diodes Inc  N-channel MOSFET, 115 mA, 60 V, 3-Pin SOT-323
2N7002W-7-F
DiodesZetex

Product Information

Maximum Drain Source Voltage:
60 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
200 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2V
Height:
1mm
Width:
1.35mm
Length:
2.2mm
Maximum Drain Source Resistance:
13.5 Ω
Package Type:
SOT-323
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
115 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 115 mA 60 V 3-Pin SOT-323 manufactured by DiodesZetex. The manufacturer part number is 2N7002W-7-F. It has a maximum of 60 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 200 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2v of maximum gate threshold voltage. In addition, the height is 1mm. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. It provides up to 13.5 ω maximum drain source resistance. The package is a sort of sot-323. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 115 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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2N7002W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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