Toshiba TPH4R606NH N-channel MOSFET, 85 A, 60 V TPH, 8-Pin SOP Advanced

TPH4R606NH Toshiba  N-channel MOSFET, 85 A, 60 V TPH, 8-Pin SOP Advanced
Toshiba

Product Information

Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
49 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
63 W
Series:
TPH
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
0.95mm
Width:
5mm
Length:
5mm
Maximum Drain Source Resistance:
11 mΩ
Package Type:
SOP Advanced
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
85 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 85 A 60 V TPH 8-Pin SOP Advanced manufactured by Toshiba. The manufacturer part number is TPH4R606NH. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 49 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 63 w maximum power dissipation. The product tph, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 0.95mm. Furthermore, the product is 5mm wide. Its accurate length is 5mm. It provides up to 11 mω maximum drain source resistance. The package is a sort of sop advanced. It consists of 1 elements per chip. While 85 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.

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TPH4R606NH, Silicon N-Channel MOSFET (U-MOSVIII-H) Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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