Category:
Power MOSFET
Dimensions:
2.9 x 2.4 x 0.8mm
Maximum Continuous Drain Current:
2.2 A
Transistor Material:
Si
Width:
2.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
2.3V
Package Type:
PS
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.5 nC @ 5 V, 7.5 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
360 pF@ 10 V
Length:
2.9mm
Pin Count:
8
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.68 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.8mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
180 mΩ
