Category:
Power MOSFET
Dimensions:
5 x 5 x 0.95mm
Maximum Continuous Drain Current:
7.5 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
30 mΩ
Package Type:
SOP Advanced
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15 nC @ 5 V, 27 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
1190 pF@ 10 V
Length:
5mm
Pin Count:
8
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.8 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.95mm
Minimum Operating Temperature:
-55 °C
