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Toshiba TPCA8106(TE12L,Q) P-channel MOSFET, 40 A, 30 V, 8-Pin MLP

TPCA8106-TE12L-Q- Toshiba TPCA8106(TE12L,Q) P-channel MOSFET, 40 A, 30 V, 8-Pin MLP
TPCA8106(TE12L,Q)
Toshiba

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
130 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.8 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2V
Height:
0.95mm
Width:
5mm
Length:
5mm
Maximum Drain Source Resistance:
7.8 mΩ
Package Type:
MLP
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
40 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
RoHs Compliant
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This is P-channel MOSFET 40 A 30 V 8-Pin MLP manufactured by Toshiba. The manufacturer part number is TPCA8106(TE12L,Q). It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 130 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.8 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2v of maximum gate threshold voltage. In addition, the height is 0.95mm. Furthermore, the product is 5mm wide. Its accurate length is 5mm. It provides up to 7.8 mω maximum drain source resistance. The package is a sort of mlp. It consists of 1 elements per chip. While 40 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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