Toshiba TPC8050-H(TE12L,Q) N-channel MOSFET, 11 A, 60 V TPC, 6-Pin SOP

TPC8050-H-TE12L-Q- Toshiba TPC8050-H(TE12L,Q) N-channel MOSFET, 11 A, 60 V TPC, 6-Pin SOP
Toshiba

Product Information

Maximum Continuous Drain Current:
11 A
Transistor Material:
Si
Width:
4.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.3V
Package Type:
SOP
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
21 nC @ 5 V, 41 nC @ 10 V
Channel Type:
N
Length:
6mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.9 W
Series:
TPC
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
15.6 mΩ
RoHs Compliant
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This is N-channel MOSFET 11 A 60 V TPC 6-Pin SOP manufactured by Toshiba. The manufacturer part number is TPC8050-H(TE12L,Q). While 11 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.4mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 2.3v of maximum gate threshold voltage. The package is a sort of sop. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 21 nc @ 5 v, 41 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.9 w maximum power dissipation. The product tpc, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.5mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 15.6 mω maximum drain source resistance.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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