Toshiba TK62N60W,S1VF(S N-channel MOSFET, 62 A, 600 V TK, 3-Pin TO-247

TK62N60W-S1VF-S Toshiba TK62N60W,S1VF(S N-channel MOSFET, 62 A, 600 V TK, 3-Pin TO-247
TK62N60W,S1VF(S
Toshiba

Product Information

Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
180 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
400 W
Series:
TK
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
3.7V
Height:
20.95mm
Width:
5.02mm
Length:
15.94mm
Maximum Drain Source Resistance:
40 mΩ
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
62 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 62 A 600 V TK 3-Pin TO-247 manufactured by Toshiba. The manufacturer part number is TK62N60W,S1VF(S. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 180 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 400 w maximum power dissipation. The product tk, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 3.7v of maximum gate threshold voltage. In addition, the height is 20.95mm. Furthermore, the product is 5.02mm wide. Its accurate length is 15.94mm. It provides up to 40 mω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. While 62 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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TK62N60W, MOSFET Silicon N-Channel MOS (DTMOS IV)(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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